THz detectors

Optimization of Detection of THz signal with plasmon polariton(Modeling, Realization, Measurement)

  • Modeling of plasmon-polariton resonances of AlGaN/GaN, InAlN/GaN, SiGe/Si/SiGe, AlGaAs/GaAs quantum wells with metallic grating by coupling between plasmon and polariton

Illustration of modeling of AlGaN/GaN at 77 K and 300 K and comparison with FTIR experiment (AlGaN/GaN quantum well structured on surface)

To realize a strong excitation of plasmon-polariton, we should work at lower temperature, with the highest carrier concentration, the distance between metal strips and plasma layer must be as small as possible, and filling factor must be the highest.