1. Articles

  •  Yasbeck K., De Lustrac A., Jin Y., Crozat P., Aniel F., Adde R., Vernet G. »Electrostatic capacitances in standard and pseudomorphic ultrashort gate length HEMTs », Elec. Letters, Sept. 1992, Vol. 28, No. 19.
  •  Crozat P., Bouchon D.,De Lustrac A. , Aniel F., Jin Y., Adde R., »Cryogenic behavior of ultrashort gate AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs  HEMT’s »Microelec.Eng., Vol19, pp.861-864, 1992.
  • Van Hove M.,  Zou  G., De Raedt W., Jansen PH.,  Jonckeere  R., Van Rossum M., Hoole A.C.F., Allee D.R., Broers A.N., Crozat P., Jin Y., Aniel F., Adde R., »Scaling behavior of delta-doped AlGaAs/InGaAs HEMT with gate length down to 60 nm and Source-Drain gaps down to 230nm » J.Vac. Sci. Technol. B 11(4), Jul/Aug 1993
  • Aniel F., Jin -DelormeY, Crozat P, A. De Lustrac A., Adde R., Van Hove M.,  De Raedt W., Van Rossum M., Jin Y., Launois H.    »Gate length electric parameter dependences of ultra-submicrometer d-doped pseudomorphic  » Elec. Letters, Aug. 1993, Vol. 29, No. 17.o 230nm » J.Vac. Sci. Technol. B 11(4), Jul/Aug 1993
  • Aniel F., De Lustrac A., Crozat P., Jin Y., Adde R., »Facteurs determinant les performances des HEMT Al0.3Ga0.7As/GaAs à grille ultra-courte à basse température »Comptes rendus JNM93, BREST pp.5D_225D_23
  • Yazbek-K., Dadashi-H., Aniel-F., Bouillault-F., de-Lustrac A.,  « Determination of electrostatic capacitances in ultrashort gate length HEMT’s » COMPEL-The-International-Journal-for-Computation-and-Mathematics-in-Electrical-and-Electronic-Engineering., vol.13, suppl.A; May 1994; p.283-6.
  • Aniel F., Boucaud P., Sylvestre A., Crozat P., Julien F.H., Adde R., Jin Y., « Electroluminescence and gate current generated by impact ionization in 0.1µm  gatelength HEMTs on GaAs » Comptes rendus de ESSDERC’94, Edinbour
  •  Aniel-F., Crozat P., De Lustrac A., Adde R., Jin Y., « High field transport effects on low temperature operation of pseudomorphic  HEMTs »   Journal de Physique IV, vol C6-171, juin 1994,
  • Vernet G., Aniel-F., Crozat P.,  Henaux J.C., S. Megherbi S., Raynaud G., Sylvestre A., Parisot M., Bourne P.   » Outils d’aide à la Conception et la Caractérisation des Circuits Intégrés Micro-ondes (MMIC) sur GaAs » l’Onde Electronique, Janvier/Fevrier 1995, Vol. 75, n°1.
  • Aniel-F., Boucaud P., Sylvestre A., Crozat P., Julien F.H., Adde R., Jin Y., »Electro-luminescence Spectroscopy analysis of AlGaAs/InGaAs and AlGaAs/GaAs HEMTs  » Journal of Applied Physics, 77 (5), Mars 1995.
  • Aniel-F., Sylvestre A., Jin Y., Crozat P.,Adde R., « Enhancements and Degradations of Ultrashort Gate GaAs and InP HEMTS Properties at Cryogenic Temperatures: an Overview »  Journal de physique IV, vol.  pp, 1996
  • Sylvestre A., Aniel-F., Boucaud P., Julien F.H., Crozat P., Adde R., De Lustrac A., Jin Y., « Electroluminescence Spectroscopy of HEMTs on InP at cryogenic temperatures »  Journal  of Applied Phys., 80 (1), pp 464-469, July 1996
  • Lepaul S., Aniel-F., Peymayeche L., De Lustrac A., F. Bouillaut  F., Adde R., « Non-isothermal quasi-bidimensionnal energy balance model » Electron. Lett.,  Vol. 32, No. 7, pp. 692-694, 1996
  • Zérounian N., Aniel F., KonczykowskA A., Kauffmann N., Adde R., « Extraction Strategies of Semiconductor Devices Parameters Using Symbolic Approach and Optimization Methods » Comptes rendus de ECCTD 97, Budapest, September 97.

  •  Aniel-F., Vernet G.,  ”A 4 noise parameters determination method for transistors based on the frequency dependence of the noise figure”, Electron. Lett., vol. 34, pp. 1612-1613, 1998.
  • Danelon V., Aniel-F., Mba J.  ,Riet M., Benchimol J. L., Crozat P., Vernet G., Adde R.,« Noise Parameters of InP-Based Double Heterojunction Base Collector Self-Aligned Bipolar Transistors »IEEE Microwave and Guided wave Letters, Vol. 9, No.5, pp. 195-197, May 1999
  • Zeuner M., T. Hackbarth T.  Gruhle A., Konig U.F., Aniel F.,« High Performance 0.25µm T-gate SiGe-n-MODFET »57th Device Research Conference, University of California, Santa Barbara, CA, June 1999
  • Zérounian N., Aniel F., Adde R., Zeuner M., Hackbarth T.  , Gruhle A., Konig U.« Low temperature analysis of 0.25um T-Gate SiGe n-MODFET  » Comptes rendus de ESSDERC’99, Louvain, pp . 296-299
  • Zeuner M., T. Hackbarth T.  Gruhle A., Konig U.F., Aniel F.,« High Performance 0.25µm T-gate SiGe-n-MODFET »57th Device Research Conference, University of California, Santa Barbara, CA, June 1999
  •  Cavassilas N., Aniel-F., Boucaud P., Adde R., Maher H., Decobert  J., Scavennec A.,« Electroluminescence of composite Channel AlInAs/InGaAs/InP/AlInAs HEMT »Journal of Applied Physics, Vol. 8, N°5, March 2000
  • Aniel-F., Zerounian N., Adde R., M. Zeuner M. , Hackbarth T., Konig U.« Low temperature analysis of 0.25 µm T-Gate SiGe n-MODFET  »IEEE Transaction on Electron Device, VOL47 ,  n°7  , Juillet 2000, pp. 1477-83
  • Zerounian N., Aniel-F., Adde R., Gruhle A.,  « SiGe heterojunction Bipolar transistor with 213GHz fT at 77K »Electronic Letters 8 Juin 2000, Vol. 36, NO. 12
  • Zerounian N., Aniel-F., Adde R.« On the Determination of the Cutoff Frequency of High-Frequency Bipolar Transistors »Electronic Letters, Vol. 36, Issue 14, 6 Juillet 2000
  • Höck G., Hackbarth T., Käb N., Herzog H.-J., Enciso M., Aniel F., Crozat P.,  Adde R., Kohn E., König U.,« A 0.1 µm gate length p-type Ge/Si0.4Ge0.6 MODFET with 135 GHz fmax »Electronic Letters, Volume: 36 Issue: 16, 3 Aug. 2000, pp. 1428 –1429
  • Brunhes T., Boucaud P.,  Sauvage S., Aniel F., Lourtioz J-M., Hernandez C., Campidelli Y.,Bensahel D., Faini G., Sagnes I.,« Electrolumineecence of Ge/Si self-assembled quantum dots grown chemical vapor deposition Appl. Phys. Lett., Vol. 77,
  • Enciso M., Aniel F., Crozat P.,Adde R.,«Noise Hock G. , Hackbarth T.  and H. Herzog H.“De-embedded ultra low noise 0.1 µm gate length Ge/Si0.4 Ge0.6 p-MODFET”Electronic letters, vol 37 issue 24, pp 1478-1479; Nov 2001.
  • Crozat P., Aniel F., Mesures micro-ondes en basses températures sur matériaux et composants7 émes Journées Caractérisations Micro-ondes et Matériaux, JCMM2002, 20-22 Mars 2002Toulouse, pp39-47, contribution invitée
  •  Aniel F., Enciso-Aguilar M., Zerounian N., Giguerre L.,  Crozat P., Adde R., M. Zeuner M., Hock G., Hackbarth T., Herzog H-J.  , Konig U.« SiGe Hetero FETs on silicon at cryogenic temperature », Jour. De Phys. IV, pp 3-10
  • Cavassilas N., Aniel F., Fishman G., Adde R., »Full-Band Matrix solution of the Boltzmann transport and electron impact ionization in GaAs » Solid state electronics, vol. 46, p. 559, 8 pages, 2002
  •  Cavassilas N., Autran J.-L., Aniel F., Fishman G., »Energy and temperature of electron effective masses in silicon »Journal of applied physics, vol. 92, p. 1431, 7 pages, 2002
  • Ben Radhia S., Ridene S., Boujdaria K., Bouchriha H., Fishman G., »Band structures of Ge and InAs: A Twenty k.p model » Journal of applied physics, vol. 92, p. 4422, 2002
  • Cavassilas N., Aniel F., G. Fishman “Energy-Band Structure of Strained Indirect Gap Semiconductor: A k . p Method “ Proc. of ICCN 2002
  • Aniel F., Enciso-Aguilar M., Zérounian N., Giguerre L., Crozat P., Adde R.,  Zeuner M.,  Höck G., Hackbarth T., Herzog H., Konig U. SiGe Hetero FETs on silicon at cryogenic temperature”, 5th European Workshop on low temperature electronics WOLTE-5, June 2002 (invited paper), p
  • Aniel F., Enciso-Aguilar M., Crozat P., Adde R., Hackbarth T., Seiler U., Herzog H.,, Konig Von Kanel U. H.“Gate length scaling in high fMAX Si/SiGe n-MODFET ”,ESSDERC 2002, September 2002, Florence, Italy,  p.
  • Richard S., Cavassilas N., Aniel F., Fishman G., »Energy-band structure in strained silicon: A 20-band k.p and Bir-Pikus Hamiltonian model. »Journal of applied physics, vol. 94, num. 3, p. 1795, 5 pages, 2003
  • Richard S., Cavassilas N., Aniel F., Fishman G., »Strained silicon on SiGe: Temperature dependence of carrier effective masses. »Journal of applied physics, vol. 94, num. 8, p. 5088, 7 pages, 2003
  • Enciso-Aguilar M., Aniel F., Crozat P., Adde R., Herzog H.-J., Hackbarth T., Konig U., Von Kanel H., »DC and high frequency performance of a 0.1 µm n- type Si/Si0.6Ge0.4 MODFET with fMAX = 188 GHz at 300 K and fMAX = 230 GHz at 50 K. »Electronics letters, vol. 39, num. 1, p. 149, 3 pages, 2003
  • Aniel F., Enciso-Aguilar M., Giguerre L., Crozat P., Adde R., Mack T., Seiler U., Hackbarth T., Raynor B., »High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET. »Solid state electronics, vol. 47, num. 3, p. 283, 7 pages, 2003
  • Zeuner M., Hackbarth T., Enciso-Aguilar M., Aniel F., Kanel H.-V., »Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices. »Japanese journal of applied physics, vol. 42, num. 4B, p. 2363, 4 pages, 2003
  • Ben Radhia S., Boujdaria K., Ridene S., Bouchriha H., Fishman G., »Band Structure of GaAs, InAs and Ge: a 24 k.p model »Journal of applied physics, vol. 94, p. 5726, 2003
  • Enciso Aguilar M., Rodriguez M., Zerounian N., Aniel F., Hackbarth T., Herzog H.-J., König U., Mantl S., Holländer B., Chrastina D., Isella G., von Känel H., Lyutovich K., Oehme M. »Strained Si HFETs for microwave applications: state-of-the-art and further approaches »Solid state electronics, vol. 48, num. 8, p. 1443, 10 pages, 2004
  • Zerounian N., Rodriguez M., Enciso M., Aniel F., Chevalier P., Martinet B., Chantre A., »Transit Times of SiGe:C HBTs using Non Selective Base Epitaxy »Solid state electronics, vol. 48, num. 10-11, p. 1993, 7 pages, 2004
  • Hackbarth T., Herzog H.-J., Hieber K.-H., König U., Mantl S., Holländer B., Lenk S., Von Känel H., Enciso M., Aniel F., Giguerre L. »Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance »Solid state electronics, vol. 48, num. 10-11, p. 1921, 5 pages, 2004
  • Aniel F., Enciso M., Richard S., Giguerre L., Zerounian N., Crozat P., Adde R., Hackbarth T.,Herzog J.-H., König U. »Microwave performances of silicon heterostructure-FETs »Applied surface science, vol. 224, num. 1-4, p. 370, 7 pages, 2004
  • Boujdaria K., Ridene S., Ben Radhia S., Bouchriha H., Fishman G., »Symmetrized Halmitonian versus Foreman Hamiltonian for semiconductor valence band: an insight »Solid state communications, vol. 129, p. 221, 2004
  • Richard S., Aniel F., Fishman G., »Energy-band structure of Ge, Si and GaAs : a thirty-band k.p method »Physical review. B, Solid state, vol. B 70, p. 235204, 6 pages, 2004
  • Richard S., Zerounian N., Cavassilas N., Höck G., Hackbarth T., Herzog H.-J., Aniel F. »Electroluminescence of Ge/SiGe pMODFETs »Materials science in semiconductor processing, vol. 8, p. 377, 6 pages, 2005
  • Richard S., Drouhin H.-J., Rougemaille N., Fishman G., »Structure of spin-split evanescent states in the fundamental gap of zinc-blende-type semiconductors »Journal of applied physics, vol. 97, 083706-1, 2005
  • Huyghe S., Bechou L., Zerounian N., Deshayes Y., Aniel F., Denolle A., Laffitte D., Goudard J., Danto Y. »Electroluminescence spectroscopy for reliability investigations of 1.55 µm bulk semiconductor optical amplifier. »Microelectronics reliability, vol. 45, num. 9-11, p. 1593, 7 pages, 2005
  • Chevalier P., Fellous C., Rubaldo L., Pourchon F., Pruvost S., Beerkens R., Saguin F., Zerounian N., Barbalat B., Lepilliet S., Dutartre D., Céli D., Telliez I., Gloria D., Aniel F., Danneville F., Chantre A. »230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications »IEEE journal of solid-state circuits, vol. 40, num. 10, p. 2025, 10 pages, 2005
  • Sirbu M., Lepaul S.-B.-P., Aniel F., »Coupling 3-D Maxwell and Boltzmann equations for analyzing a terahertz photoconductive switch »IEEE transactions on microwave theory and techniques, vol. 53, num. 9, p. 2991, 8 pages, 2005
  • Richard S., Aniel F., Fishman G. »Band diagrams of Si and Ge quantum wells via the 30-band k.p method »Physical review. B, vol. 72, p. 245316, 2005
  • Enciso Aguilar M., Crozat P., Hackbarth T., Herzog H.-J., Aniel F. »Microwave noise performance and modeling of SiGe-Based HFETs »IEEE transactions on electron devices, vol. 52, num. 11, p. 2409, 7 pages, 2005
  • Rougemaille N., Drouhin H.-J., Richard S., Fishman G., Schmid A. K. »Spin-induced forbidden evanescent states in III-V semiconductors »Physical review letters, vol. 95, p. 186406, 2005
  • Barbalat B., Schwartzmann T., Chevalier P., Vandelle B., Rubaldo L., Lachater A., Saguin F., Zerounian N., Aniel F., Chantre A. »The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors » Semiconductor science and technology, vol. 22, num. 1, p. 99, 4 pages, 2007
  • Zerounian N., Enciso-Aguilar M., Hackbarth T., Herzog H.-J., Aniel F. »Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET »Solid state electronics, vol. 51, num. 3, p. 449, 11 pages, 2007
  • Zerounian N., Aniel F., Barbalat B., Chevalier P., Chantre A. »500 GHz cutoff frequency SiGe HBTs »Electronics Letters, vol. 43, num. 14, p. 774, 2 pages, 2007
  • Mangeney J.,  Chimot N.,  Meignien L., Zerounian N., Crozat P.,  Blary K.,Lampin J. F., Mounaix P., « Emission characteristics of ion-irradiated In0.53Ga0.47As based photoconductive antennas excited at 1.55 μm, » Optics Express, vol. 15, no. 14, pp. 8943-8950, 2007
  • Mangeney J. , Chimot N., Meignien L, Zerounian N, Crozat P.,  Blary K.,Lampin J. F, Mounaix P., « Ion-irradiated In0.53Ga0.47As based photoconductive antennas excited at 1.55 µm for time domain terahertz spectroscopy, » the joint 32nd International Conference on Infrared and Millimetre Waves and 15th International Conference on Terahertz Electronics (IRMMW-THz), Cardiff, United Kingdom, 2-7 décembre 2007. Conf. Proceeding IEEE, pp. 668-669. ISBN 978-1-4244-1438-3.
  • Chevalier P. ,  Geynet B., Vandelle B.Brossard F. , Pourchon F. , Avenier G. ,  Gloria D.,  Dutartre D., Lepilliet S., DambrinG;, Zerounian N., Yau K. H. K., Laskin E. , S.T. Nicolson, Voinigescu S.P., Chantre A., « Si/SiGe HBTs for Millimeter-wave BiCMOS Technologies, » the 66th Device Research Conference, 2008, Santa Barbara, CA, USA, 23-25 Juin 2008. Conf. Proceedings pp. 195-198. ISBN 978-1-4244-1942-5.
  • Mangeney J. , Merigault A. , Zerounian N. ,  Crozat P.,  Blary K. , Lampin J. F. , « Continuous wave terahertz generation up to 2 THz by photomixing on ion-irradiated In0.53Ga0.47As at 1.55 μm wavelengths, » Applied Physics Letters, vol. 91, no. 24, p. 241102, 2008
  • Devolder T.,  Hayakawa J.,  Ito K.,  Takahashi H.,  Ikeda S.,  Crozat P.,  Zerounian N., KimJ.-V., Chappert C.,  Ohno H., « Single-shot time-resolved measurements of nanosecond-scale spin-transfer induced switching: Stochastic versus deterministic aspects, » Physical Review Letters, vol. 100, p. 057206, 2008.
  •   El Kurdi M.,  Checoury X.,  David S., Ngo T.P. ,  Zerounian N.,  Boucaud P.,  Kermarrec O.,  Campidelli Y.,  Bensahel D., « Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source, » Optics Express, vol. 16, no. 12, pp. 8780-8791, 2008.
  •   Martin M.,  Mangeney J.,  Crozat P.,  Chassagneux Y,Colombelli R.,  Zerounian N.,  Vivien L.,  Blary K., « Gigahertz modulation of tunable terahertz radiation from photomixers driven at telecom wavelengths, » Applied Physics Letters, vol. 93, no. 13, p. 131112, 2008.
  • Perret E., Zerounian N., David S., Aniel F. »Complex permittivity characterization of benzocyclobutene for terahertz applications »Microelectronic engineering, vol. 85, num. 11, p. 2276, 6 pages, 2008
  • Ramirez-Garcia E., Zerounian N., Crozat P., Enciso-Aguilar M., Chevalier P., Chantre A., Aniel F. »SiGe heterojunction bipolar transistor issues towards high cryogenic performances »Cryogenics, vol. 49, num. 11, p. 620, 6 pages, 2009
  • Zerounian N., Aniel F., Barbalat B., Chevalier P., Chantre A. »Parasitic electrostatic capacitance of high-speed SiGe Heterojunction Bipolar Transistors »Solid state electronics, vol. 53, p. 483, 7 pages, 2009
  • Nguyen H., Drouhin H.-J., Wegrowe J.-E., Fishman G. »Spin rotation, spin filtering, and spin transfer in directional tunneling through barriers in noncentrosymmetric semiconductors »Physical Review. B, vol. 79, p. 165204, 21 pages, 2009
  • Nguyen H., Drouhin H.-J., Wegrowe J.-E., Fishman G. »Spin-orbit engineering of semiconductor heterostructures: A spin-sensitive quantum-phase shifter »Applied Physics Letters, vol. 95, num. 8, p. 082108, 3 pages, 2009
  • Nguyen H., Drouhin H.-J., Wegrowe J.-E., Fishman G. »Spin trajectory along an evanescent loop in zinc-blende semiconductors »Physical Review. B, vol. 80, num. 7, p. 075207, 6 pages, 2009
  • Tissafi B., Aniel F., Pichon L., Essakhi B., Guiffaut C., Lepaul S. »Comparative study of three wave propagation software programs for the modeling of coupled Maxwell and Boltzmann equations at THz frequency »Applied Computational Electromagnetics Society Journal, vol. 24, num. 4, p. 382, 9 pages, 2009
  • Manfrini M. ,Devolder T., Joo-Von Kim, Crozat P. ,Zerounian N.,ChappertC.,  Van Roy W., Lagae L., Hrkac G., Schreft T., « Agility of vortex-based nanocontact spin torque oscillators, » Applied Phys. Lett., vol. 95, p. 192507, 2009
  • Schiellein J., Rosales M.,PolleuxJ.-L. , Duport F. , Algani C. , Rumelhard C. , Merlet T.,  Zerounian N.,  Riet M.,  Godin J., Scavennec A., « Experimentation influence of the base load effect on SiGe/Si and InGaAs/InP HPTs, » IEEE International Topical Meeting on Microwave Photonics (MWP 2009), 14-16 octobre 2009, Valencia, Espagne. Conf. Proceedings ISBN 978-1-4244-4788-6.
  • Mumford R., Vanhoenacker-Janvier D., Aniel F., Baudoin G., Eudeline P. »Microwaves in Europe: On the road to recovery? »Microwave Journal, vol. 53, num. 9, p. 86, 11 pages, 2010
  • Tea E., Aniel F. »Minority electron mobilities in GaAs, In0.53Ga0.47As, and GaAs0.50Sb0.50 calculated within an ensemble Monte Carlo model »Journal of applied physics, vol. 109, num. 3, p. 033716, 10 pages, 2011
  • Hamzeh H., Aniel F. »Monte Carlo study of phonon dynamics in III-V compounds »Journal of applied physics, vol. 109, num. 6, p. 063511, 11 pages, 2011
  • Drouhin H.-J., Fishman G., Wegrowe J.-E. »Spin currents in semiconductors: Redefinition and counterexample »Physical Review. B, vol. 83, num. 11, p. 113307, 4 pages, 2011
  • Ramirez-Garcia E., Michaillat M., Aniel F., Zerounian N., Enciso-Aguilar M., Rideau D. »SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time »Solid state electronics, vol. 61, p. 58, 7 pages, 2011
  • Grimault-Jacquin A.-S., Tissafi B., Perret E., Aniel F. »Consideration to minimize losses in terahertz coplanar waveguide on indium phosphide »Microwave and optical technology letters, vol. 54, num. 1, p. 213, 7 pages, 2011
  • Tea E., Hamzeh H., Aniel F. »Hot carriers relaxation in highly excited polar semiconductors: Hot phonons versus phonon–plasmon coupling »Journal of applied physics, vol. 110, p. 113108, 8 pages, 2011
  • Ramirez-Garcia E., Aniel F., Enciso-Aguilar M., Riet M., Zerounian N. »Experimental and modelling investigation of the influence of noise transit time and self-heating on microwave noise of Si/SiGe:C and InP/InGaAs HBTs » Semiconductor Science and Technology, vol. 27, p. 065016, 9 pages, 2012
  • Ramirez-Garcia E., Aniel F., Zerounian N., »Apparent base resistance decomposition by means of small-signal and high-frequency noise analyses of submicron InP/InGaAs HBTs »Semiconductor Science and Technology, vol. 27, p. 085005, 5 pages, 2012
  • Cao L., Grimault-Jacquin A.-S., Aniel F. »Optimal structure for resonant THz detection of plasmons–polaritons in the 2D quantum wells »Applied Physics. A, Materials Science and Processing, vol. 109, num. 4, p. 985, 7 pages, 2012
  • Ramirez-Garcia E., Aniel F., Enciso-Aguilar M., Zerounian N., »Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors »Semiconductor Science and Technology, vol. 28, p. 045003, 9 pages, 2013
  • Cao L., Grimault-Jacquin A.-S., Aniel F »Comparison and Optimization of dispersion and losses of planar waveguides on benzocyclobutene (BCB) at THz frequencies: Coplanar waveguide (CPW), microstrip, stripline and slotline »Progress In Electromagnetics Research B, vol. 52, p. 161, 23 pages, 2013
  • Cao L., Grimault-Jacquin A.-S., Zerounian N., Aniel F. »Design and VNA-measurement of coplanarwaveguide (CPW) on benzocyclobutene (BCB) at THz frequencies »Infrared Physics and Technology, vol.63, p. 157, 8 pages, 2014
  • Paulillo B., Manceau J.M,  Degiron A.,Zerounian N, Beaudoin G.,  Sagnes I.,  Colombelli R., « Circuit-tunable sub-wavelength THz resonators: hybridizing optical cavities and loop antennas, » Optics Express, vol. 22, no. 18, pp. 21302-21312, 2014.
  • Spisser H.,  Grimault-Jacquin A.-S., Zerounian N. , Aassime A.,Cao L. , Boone F.,Maher  H.,Cordier Y. ,  Aniel F.  »Room-temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating »,Journal of Infrared, Millimeter, and Terahertz Waves, vol. 37, pp 243–257, 2016
  • Paulillo B., Pirotta S. , Guilet S., Crozat P,  Manceau J.-M.,  Zerounian N., Degiron A., Sagnes I. , Beaudoin G.,  Xu G., Li L.  Linfield E. H.,  Davies G.A., Colombelli R., « Sub-wavelength THz resonators for ultra-fast THz detection, » SPIE conference Quantum Sensing and Nano Electronics and Photonics XIV, 28 janvier-2 février 2017, San Francisco, USA. Proceedings of SPIE, vol. 10111, p.101110Q. DOI: 10.1117/12.2251405. Communication invitée.